Advanced Metallizations for Next Generation Semiconductor Packaging Technology
- Authors
- Yoo, Bongyoung
- Issue Date
- Apr-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2023 International Conference on Electronics Packaging, ICEP 2023, pp.134 - 134
- Indexed
- SCOPUS
- Journal Title
- 2023 International Conference on Electronics Packaging, ICEP 2023
- Start Page
- 134
- End Page
- 134
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187441
- DOI
- 10.23919/ICEP58572.2023.10129771
- Abstract
- In recent years, many researches have been focused on the miniaturization of the integrated circuit (IC) feature size to improve the performance of semiconductor devices. However, we are facing the problems such as physical limit of the miniaturization and then increasing processing cost. To overcome these problems the Through-Si-Via (TSV) interconnection, a kind of the 3D interconnection, is a promising technology that could achieve high density, lower energy consumption and high performance in the IC. © 2023 Japan Institute of Electronics Packaging.
- Files in This Item
-
Go to Link
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.