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Three-Dimensional Grain Boundary Ion Transport Channels Providing Reliable and Robust Reconfigurable Resistive Switching Memory for Neuromorphic Computing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박희준 | - |
| dc.date.accessioned | 2023-07-24T12:06:35Z | - |
| dc.date.available | 2023-07-24T12:06:35Z | - |
| dc.date.issued | 2023-02-15 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187889 | - |
| dc.title | Three-Dimensional Grain Boundary Ion Transport Channels Providing Reliable and Robust Reconfigurable Resistive Switching Memory for Neuromorphic Computing | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Korean Conference on Semiconductor | - |
| dc.citation.conferencePlace | 강원도 하이원리조트 | - |
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Collections - 서울 공과대학 > 서울 유기나노공학과 > 2. Conference Papers
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- Park, Hui Joon
- COLLEGE OF ENGINEERING (DEPARTMENT OF ORGANIC AND NANO ENGINEERING)