Cited 0 time in
Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shim, Jong-In | - |
| dc.contributor.author | Kim, Hyunsung | - |
| dc.contributor.author | Shin, Dong Soo | - |
| dc.date.accessioned | 2023-07-27T11:53:12Z | - |
| dc.date.available | 2023-07-27T11:53:12Z | - |
| dc.date.created | 2021-05-11 | - |
| dc.date.issued | 2014-11 | - |
| dc.identifier.issn | 2162-108X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188119 | - |
| dc.description.abstract | Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. ? OSA 2014 | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | OSA - The Optical Society | - |
| dc.title | Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
| dc.contributor.affiliatedAuthor | Shin, Dong Soo | - |
| dc.identifier.doi | 10.1364/acpc.2014.ath4i.2 | - |
| dc.identifier.scopusid | 2-s2.0-85091231824 | - |
| dc.identifier.bibliographicCitation | Asia Communications and Photonics Conference, ACP, v. , pp.1 - 3 | - |
| dc.relation.isPartOf | Asia Communications and Photonics Conference, ACP | - |
| dc.citation.title | Asia Communications and Photonics Conference, ACP | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Conference Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Efficiency | - |
| dc.subject.keywordPlus | Gallium alloys | - |
| dc.subject.keywordPlus | III-V semiconductors | - |
| dc.subject.keywordPlus | Indium alloys | - |
| dc.subject.keywordPlus | Light emitting diodes | - |
| dc.subject.keywordPlus | Semiconductor alloys | - |
| dc.subject.keywordPlus | Semiconductor quantum wells | - |
| dc.subject.keywordPlus | Efficiency droops | - |
| dc.subject.keywordPlus | High currents | - |
| dc.subject.keywordPlus | InGaN quantum wells | - |
| dc.subject.keywordPlus | Low currents | - |
| dc.subject.keywordPlus | Nonradiative recombination rates | - |
| dc.subject.keywordPlus | Radiative recombination rate | - |
| dc.subject.keywordPlus | Photonics | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8687501?arnumber=8687501&SID=EBSCO:edseee | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
