Native defect clustering-induced carrier localization centers leading to a reduction of performance in Ga0.70In0.30N/GaN quantum wellsopen access
- Authors
- Han, Dong-Pyo; Kim, Jiwon; Shin, Dong-Soo; Shim, Jong-In
- Issue Date
- May-2023
- Publisher
- Optical Society of America
- Citation
- Optics Express, v.31, no.10, pp.15779 - 15790
- Indexed
- SCIE
SCOPUS
- Journal Title
- Optics Express
- Volume
- 31
- Number
- 10
- Start Page
- 15779
- End Page
- 15790
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188142
- DOI
- 10.1364/OE.486721
- ISSN
- 1094-4087
- Abstract
- In this study, we aimed to better understand the mechanism for creating carrier localization centers (CLCs) in Ga0.70In0.30N/GaN quantum wells (QWs) and examine their impacts on device performance. Particularly, we focused on the incorporation of native defects into the QWs as a main cause of the mechanism behind the CLC creation. For this purpose, we prepared two GaInN-based LED samples with and without pre-trimethylindium (TMIn) flow-treated QWs. Here, the QWs were subjected to a pre-TMIn flow treatment to control the incorporation of defects/impurities in the QWs. In an effort to investigate how the pre-TMIn flow treatment affects the incorporation of native defects into the QWs, we employed steadystate photo-capacitance and photo-assisted capacitance-voltage measurements, and acquired high-resolution micro-charge-coupled device images. The experimental results showed that CLC creation in the QWs during growth is closely related to the native defects, most likely VN-related defects/complexes, since they have a strong affinity to In atoms and the nature of clustering. Moreover, the CLC creation is fatal to the performance of the yellow-red QWs since they simultaneously increase the non-radiative recombination rate, decrease the radiative recombination rate, and increase operating voltage-unlike blue QWs.
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