A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gong, Yunyi | - |
dc.contributor.author | Cho, Moon-Kyu | - |
dc.contributor.author | Song, Ickhyun | - |
dc.contributor.author | Cressler, John D. | - |
dc.date.accessioned | 2023-09-18T06:52:16Z | - |
dc.date.available | 2023-09-18T06:52:16Z | - |
dc.date.issued | 2018-08 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.issn | 1558-1764 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190778 | - |
dc.description.abstract | This letter presents a 28-GHz switchless, SiGe bidirectional amplifier (BDA) using a neutralized differential common-emitter amplifier core. On-chip transformer-based input-output baluns are included in the design for single-ended measurement and characterization. The BDA was implemented using GlobalFoundries 8HP 0.13-mu m SiGe BiCMOS technology. The forward and backward gains are 10 and 8.6 dB, with noise figure of 3.9 and 4.2 dB, respectively, at 28 GHz. The input-referred 1-dB compression point at 28 GHz for forward and backward operations is -2.4 and -0.4 dBm, respectively. The BDA consumes 26.9 (mW) of power with a 1.6-V V-CC at a V-BE bias of 0.86 V. The circuit has dimensions of 0.71 x 0.90 mm(2) including bondpads. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/LMWC.2018.2844166 | - |
dc.identifier.scopusid | 2-s2.0-85048625871 | - |
dc.identifier.wosid | 000441446200029 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.8, pp 717 - 719 | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 28 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 717 | - |
dc.citation.endPage | 719 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | Antenna phased arrays | - |
dc.subject.keywordPlus | BiCMOS technology | - |
dc.subject.keywordPlus | Bismuth alloys | - |
dc.subject.keywordPlus | Differential amplifiers | - |
dc.subject.keywordPlus | Heterojunction bipolar transistors | - |
dc.subject.keywordPlus | Noise figure | - |
dc.subject.keywordPlus | Switches | - |
dc.subject.keywordAuthor | Bidirectional | - |
dc.subject.keywordAuthor | differential | - |
dc.subject.keywordAuthor | neutralization | - |
dc.subject.keywordAuthor | phased array | - |
dc.subject.keywordAuthor | SiGe BiCMOS | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8386816 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.