Wafer-recyclable, environment-friendly transfer printing for large-scale thin-film nanoelectronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wie, Dae Seung | - |
dc.contributor.author | Zhang, Yue | - |
dc.contributor.author | Kim, Min Ku | - |
dc.contributor.author | Kim, Bongjoong | - |
dc.contributor.author | Park, Sangwook | - |
dc.contributor.author | Kim, Young-Joon | - |
dc.contributor.author | Irazoqui, Pedro P. | - |
dc.contributor.author | Zheng, Xiaolin | - |
dc.contributor.author | Xu, Baoxing | - |
dc.contributor.author | Lee, Chi Hwan | - |
dc.date.accessioned | 2023-09-18T06:57:16Z | - |
dc.date.available | 2023-09-18T06:57:16Z | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 0027-8424 | - |
dc.identifier.issn | 1091-6490 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190816 | - |
dc.description.abstract | Transfer printing of thin-film nanoelectronics from their fabrication wafer commonly requires chemical etching on the sacrifice of wafer but is also limited by defects with a low yield. Here, we introduce a wafer-recyclable, environment-friendly transfer printing process that enables the wafer-scale separation of high-performance thin-film nanoelectronics from their fabrication wafer in a defect-free manner that enables multiple reuses of the wafer. The interfacial delamination is enabled through a controllable cracking phenomenon in a water environment at room temperature. The physically liberated thin-film nanoelectronics can be then pasted onto arbitrary places of interest, thereby endowing the particular surface with desirable add-on electronic features. Systematic experimental, theoretical, and computational studies reveal the underlying mechanics mechanism and guide manufacturability for the transfer printing process in terms of scalability, controllability, and reproducibility. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | NATL ACAD SCIENCES | - |
dc.title | Wafer-recyclable, environment-friendly transfer printing for large-scale thin-film nanoelectronics | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1073/pnas.1806640115 | - |
dc.identifier.scopusid | 2-s2.0-85051709235 | - |
dc.identifier.wosid | 000440285800003 | - |
dc.identifier.bibliographicCitation | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.115, no.31, pp E7236 - E7244 | - |
dc.citation.title | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA | - |
dc.citation.volume | 115 | - |
dc.citation.number | 31 | - |
dc.citation.startPage | E7236 | - |
dc.citation.endPage | E7244 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL SILICON | - |
dc.subject.keywordPlus | EPITAXIAL LIFT-OFF | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | ADHESION | - |
dc.subject.keywordAuthor | transfer printing method | - |
dc.subject.keywordAuthor | thin-film nanoelectronics | - |
dc.subject.keywordAuthor | Internet of Things | - |
dc.subject.keywordAuthor | delaminationnondestructive wafer recycling | - |
dc.identifier.url | https://www.pnas.org/doi/full/10.1073/pnas.1806640115 | - |
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