SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fleetwood, Zachary E. | - |
dc.contributor.author | Ildefonso, Adrian | - |
dc.contributor.author | Tzintzarov, George N. | - |
dc.contributor.author | Wier, Brian | - |
dc.contributor.author | Raghunathan, Uppili | - |
dc.contributor.author | Cho, Moon-Kyu | - |
dc.contributor.author | Song, Ickhyun | - |
dc.contributor.author | Wachter, Mason T. | - |
dc.contributor.author | Nergui, Delgermaa | - |
dc.contributor.author | Khachatrian, Ani | - |
dc.contributor.author | Warner, Jeffrey H. | - |
dc.contributor.author | McMarr, Patrick | - |
dc.contributor.author | Hughes, Harold | - |
dc.contributor.author | Zhang, Enxia | - |
dc.contributor.author | McMorrow, Dale | - |
dc.contributor.author | Paki, Pauline | - |
dc.contributor.author | Joseph, Alvin | - |
dc.contributor.author | Jain, Vibhor | - |
dc.contributor.author | Cressler, John D. | - |
dc.date.accessioned | 2023-09-26T10:12:10Z | - |
dc.date.available | 2023-09-26T10:12:10Z | - |
dc.date.created | 2023-07-07 | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/191469 | - |
dc.description.abstract | The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radiation effects response. This investigation represents the first published occurrence of a radiation-hardening-by-process approach in a SiGe HBT technology. Results show that improving IM performance can degrade the radiation tolerance of the structure. Total ionizing dose and single-event transient (SET) results are provided along with an analysis that utilizes TCAD simulation. An additional profile modification using an implanted vertical superjunction is included in this paper to expand upon how nonradiation specific device modifications can impact SETs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Ickhyun | - |
dc.identifier.doi | 10.1109/TNS.2017.2782183 | - |
dc.identifier.scopusid | 2-s2.0-85038881863 | - |
dc.identifier.wosid | 000422920800054 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.1, pp.399 - 406 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.volume | 65 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 399 | - |
dc.citation.endPage | 406 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordAuthor | Inverse-mode (IM) | - |
dc.subject.keywordAuthor | radiation-hardening-by-process (RHBP) | - |
dc.subject.keywordAuthor | silicon-germanium heterojunction bipolar transistor (SiGe HBT) | - |
dc.subject.keywordAuthor | single-event transient (SET) | - |
dc.subject.keywordAuthor | superjunction (SJ) | - |
dc.subject.keywordAuthor | total ionizing dose (TID) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8183434 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.