Effects of rubidium substitution of Cs2−xRbxAgBiBr6 double halide perovskites on resistive switching characteristics for memory applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Uijin | - |
dc.contributor.author | Lim, Jeongah | - |
dc.contributor.author | Kim, Sangmin | - |
dc.contributor.author | Park, Jinsub | - |
dc.date.accessioned | 2023-11-24T03:02:36Z | - |
dc.date.available | 2023-11-24T03:02:36Z | - |
dc.date.created | 2023-11-20 | - |
dc.date.issued | 2024-01 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192877 | - |
dc.description.abstract | Cation substitution technique in halide perovskites (HPs) is one of the famous schemes to enhance the characteristics of HPs-based electronic and optoelectronic devices. Here, we fabricated rubidium (Rb) substituted inorganic double halide perovskites (HPs) Cs2−xRbxAgBiBr6 (x = 0, 0.05, 0.1, 0.2, and 0.3) film-based resistive switching (RS) devices and investigated effects of Rb cation substitution on characteristics of RS devices. Grain sizes of the formed Cs2−xRbxAgBiBr6 films gradually increased as increase of Rb contents in the precursor. All of the fabricated RS devices demonstrated non-volatile bipolar RS behavior, device with the Rb content x = 0.1 showed a particularly high on/off ratio (9.29 × 102) of about 30 times greater than pristine Cs2AgBiBr6-based ones (3.09 × 10). In addition, it has been shown that an appropriate amount of Rb substitution at the level of x = 0.1 can effectively prevent the appearance of other crystalline phases at high humidity condition of > 80 %. Through various analytical techniques including SEM, XPS, and SCLC measurement, it was confirmed that an enlargement in grain size resulting in a decrease in defects such as Br vacancies in the fabricated film can lead to an increase in resistance at a high resistance state (HRS) and high on/off resistance ratio. This study provides a facile and feasible way to enhance performances of HPs-based RS devices for practical electronic memory applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Effects of rubidium substitution of Cs2−xRbxAgBiBr6 double halide perovskites on resistive switching characteristics for memory applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.1016/j.jallcom.2023.172771 | - |
dc.identifier.scopusid | 2-s2.0-85176246872 | - |
dc.identifier.bibliographicCitation | Journal of Alloys and Compounds, v.972, pp.1 - 8 | - |
dc.relation.isPartOf | Journal of Alloys and Compounds | - |
dc.citation.title | Journal of Alloys and Compounds | - |
dc.citation.volume | 972 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Cation substitutions | - |
dc.subject.keywordPlus | Double perovskites | - |
dc.subject.keywordPlus | Grainsize | - |
dc.subject.keywordPlus | Halide perovskites | - |
dc.subject.keywordPlus | Memory applications | - |
dc.subject.keywordPlus | Resistive switching | - |
dc.subject.keywordPlus | Resistive switching devices | - |
dc.subject.keywordPlus | Rubidium doping | - |
dc.subject.keywordPlus | Substitution techniques | - |
dc.subject.keywordPlus | Switching characteristics | - |
dc.subject.keywordAuthor | Cs2AgBiBr6 | - |
dc.subject.keywordAuthor | Double perovskite | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Rubidium doping | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838823040744?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.