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Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver

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dc.contributor.authorIldefonso, Adrian-
dc.contributor.authorSong, Ickhyun-
dc.contributor.authorTzintzarov, George N.-
dc.contributor.authorFleetwood, Zachary E.-
dc.contributor.authorLourenco, Nelson E.-
dc.contributor.authorWachter, Mason T.-
dc.contributor.authorCressler, John D.-
dc.date.accessioned2023-11-24T05:02:31Z-
dc.date.available2023-11-24T05:02:31Z-
dc.date.created2023-07-07-
dc.date.issued2017-08-
dc.identifier.issn0018-9499-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193011-
dc.description.abstractThe propagation of single-event transient (SET) signals in a silicon-germanium direct-conversion receiver carrying modulated data is explored. A theoretical analysis of transient propagation, verified by simulation, is presented. A new methodology to characterize and quantify the impact of SETs in communication systems carrying modulated data is proposed. The proposed methodology uses a pulsed radiation source to induce distortions in the signal constellation. The error vector magnitude due to SETs can then be calculated to quantify errors. Two different modulation schemes were simulated: QPSK and 16-QAM. The distortions in the constellation diagram agree with the presented circuit theory. Furthermore, the proposed methodology was applied to evaluate the improvements in the SET response due to a known radiation-hardening-by-design (RHBD) technique, where the common-base device of the low-noise amplifier was operated in inverse mode. The proposed methodology can be a valid technique to determine the most sensitive parts of a system carrying modulated data.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleModeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver-
dc.typeArticle-
dc.contributor.affiliatedAuthorSong, Ickhyun-
dc.identifier.doi10.1109/TNS.2017.2699478-
dc.identifier.scopusid2-s2.0-85029525045-
dc.identifier.wosid000411034700011-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.64, no.8, pp.2079 - 2088-
dc.relation.isPartOfIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.citation.titleIEEE TRANSACTIONS ON NUCLEAR SCIENCE-
dc.citation.volume64-
dc.citation.number8-
dc.citation.startPage2079-
dc.citation.endPage2088-
dc.type.rimsART-
dc.type.docType정기학술지(Article(Perspective Article포함))-
dc.description.journalClass1-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaNuclear Science & Technology-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNuclear Science & Technology-
dc.subject.keywordPlusINVERSE-MODE-
dc.subject.keywordAuthorQuadrature modulation-
dc.subject.keywordAuthorRF receiver (RX)-
dc.subject.keywordAuthorSEE testing-
dc.subject.keywordAuthorsilicon-germanium (SiGe)-
dc.subject.keywordAuthorsingle-event transients (SETs)-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7914785-
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