Influence of current density on constant current electric field enhanced aluminum induced crystallization of amorphous silicon thin films
DC Field | Value | Language |
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dc.contributor.author | Choi, Young Jun | - |
dc.contributor.author | Ryu, Kyongtae | - |
dc.contributor.author | Lee, Hee-Lak | - |
dc.contributor.author | Moon, Seung Jae | - |
dc.date.accessioned | 2023-11-24T05:12:10Z | - |
dc.date.available | 2023-11-24T05:12:10Z | - |
dc.date.created | 2023-07-04 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193068 | - |
dc.description.abstract | In this study, electric field-enhanced aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) thin films was investigated considering various current densities. Constant electric currents of 4, 5, and 6 A were applied to assess the Joule heating characteristics during specific durations (40, 15.5, and 9 s). The samples were prepared by depositing a 200-nm thick a-Si layer on a glass substrate and sputtering a 300-nm thick aluminum (Al) layer onto the a-Si layer. During the AIC process, layer exchange occured via the diffusion of silicon (Si) into the Al layer. This phenomenon was verified by the in-situ reflectivity, which was in excellent agreement with thin-film optics calculations. During the annealing, processing temperatures were lower than 470 °C, which is less than the Al-Si eutectic temperature of 577 °C. The Raman peak observed near a wavenumber of 519 cm−1 revealed the formation of polycrystalline silicon films through Joule heating processes. Field-effect scanning electron microscopy images were captured and analyzed to investigate the surface morphology of the samples, specifically focusing on grain growth. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier B.V. | - |
dc.title | Influence of current density on constant current electric field enhanced aluminum induced crystallization of amorphous silicon thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Moon, Seung Jae | - |
dc.identifier.doi | 10.1016/j.tsf.2023.139919 | - |
dc.identifier.scopusid | 2-s2.0-85162165565 | - |
dc.identifier.wosid | 001026136400001 | - |
dc.identifier.bibliographicCitation | Thin Solid Films, v.779, pp.1 - 7 | - |
dc.relation.isPartOf | Thin Solid Films | - |
dc.citation.title | Thin Solid Films | - |
dc.citation.volume | 779 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | METAL-INDUCED CRYSTALLIZATION | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | Aluminum induced crystallization | - |
dc.subject.keywordAuthor | Amorphous silicon | - |
dc.subject.keywordAuthor | Electric current density | - |
dc.subject.keywordAuthor | Joule heating | - |
dc.subject.keywordAuthor | Layer exchange | - |
dc.subject.keywordAuthor | Polycrystalline silicon | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609023002493?via%3Dihub | - |
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