Biocompatible memristive device based on an agarose@gold nanoparticle-nanocomposite layer obtained from nature for neuromorphic computing
DC Field | Value | Language |
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dc.contributor.author | Kim, Youngjin | - |
dc.contributor.author | An, Jun Seop | - |
dc.contributor.author | Lee, Donghee | - |
dc.contributor.author | Ryu, Seong Yeon | - |
dc.contributor.author | Hwang, Yoon-Chul | - |
dc.contributor.author | Kim, Dae Hun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2023-11-24T05:22:49Z | - |
dc.date.available | 2023-11-24T05:22:49Z | - |
dc.date.created | 2023-05-16 | - |
dc.date.issued | 2023-04 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193119 | - |
dc.description.abstract | Natural, organic, materials-based artificial synaptic devices have been in the spotlight for wearable/flexible devices due to their lightweight, biocompatibility, and scalability. In this study, an electronic memristive device based on agarose extracted from plants in the Rhodophyceae class was fabricated, and its memory characteristics and analog data processing capabilities were evaluated. The Al/agarose@gold nanoparticle (AuNP) film/indium-tin-oxide (ITO)-structured memristive device exhibited reliable resistive switching characteristics with excellent retention with a large Ron/Roff ratio of 104. Also, analog conductance changes in our device were achieved with power consumption at the pJ level. This notable behavior could be maintained under mechanical deformations from a flat to a 4-mm bent state. In the recognition simulation based on the device's performance, an 91% accuracy and clear digit classification were achieved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Nature Research | - |
dc.title | Biocompatible memristive device based on an agarose@gold nanoparticle-nanocomposite layer obtained from nature for neuromorphic computing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1038/s41598-023-32860-6 | - |
dc.identifier.scopusid | 2-s2.0-85153687009 | - |
dc.identifier.wosid | 001022530600001 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.13, no.1, pp.1 - 9 | - |
dc.relation.isPartOf | Scientific Reports | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 13 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | RESISTIVE SWITCHING MEMORY | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.identifier.url | https://www.nature.com/articles/s41598-023-32860-6 | - |
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