Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Chan Ho | - |
dc.contributor.author | Lee, Kwang H. | - |
dc.contributor.author | Lee, Byoung H. | - |
dc.contributor.author | Sung, Myung M. | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2024-01-10T02:06:03Z | - |
dc.date.available | 2024-01-10T02:06:03Z | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.issn | 1364-5501 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193890 | - |
dc.description.abstract | We report on the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with 200 nm-thick poly(vinylidene fluoride/trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer. The NVM-TFTs have been tested for the most optimum properties in respect of their memory windows and memory retention properties, as prepared with the modified channel/ferroelectric interfaces inserted by respective thin buffer layers: 1, 3, 5, 10, and 20 nm-thin Al2O3, or 1 nm-thin inorganic-organic hybrid dielectrics of a AlOx-(or TiOx-) self assembled monolayer (SAM). All our NVM-TFTs operated on glass substrates under the low-voltage WR-ER pulses of +/- 20 V with a maximum field effect mobility of similar to 1 cm(2)/V s and memory window of 12 similar to 16 V. Among all the NVM-TFTs, the device with the 5 nm-thin Al2O3 buffer demonstrated the longest retention time of more than 104 s without much reduction of write-to-erase (WR/ER) current ratio, keeping a good memory window of similar to 16 V and WR/ER ratio of similar to 40. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1039/b921732k | - |
dc.identifier.scopusid | 2-s2.0-77949532178 | - |
dc.identifier.wosid | 000275662400014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.20, no.13, pp 2638 - 2643 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 20 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 2638 | - |
dc.citation.endPage | 2643 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LAYER DEPOSITION | - |
dc.subject.keywordPlus | VAPOR | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2010/JM/B921732K | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.