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A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density (vol 48, 106505, 2009)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Yun Heub | - |
| dc.contributor.author | Bea, Ji Chel | - |
| dc.contributor.author | Lee, Kang Wook | - |
| dc.contributor.author | Lee, Gae-Hun | - |
| dc.contributor.author | Tanaka, Tetsu | - |
| dc.contributor.author | Koyanagi, Mitsumasa | - |
| dc.date.accessioned | 2024-01-10T02:06:05Z | - |
| dc.date.available | 2024-01-10T02:06:05Z | - |
| dc.date.issued | 2010-03 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.issn | 1347-4065 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193902 | - |
| dc.format.extent | 1 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
| dc.title | A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density (vol 48, 106505, 2009) | - |
| dc.type | Article | - |
| dc.publisher.location | 일본 | - |
| dc.identifier.doi | 10.1143/JJAP.49.039201 | - |
| dc.identifier.scopusid | 2-s2.0-77953978648 | - |
| dc.identifier.wosid | 000276386100071 | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.3, pp 1 - 1 | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 49 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 1 | - |
| dc.type.docType | Correction | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.039201 | - |
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- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)