Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | So, Hongyun | - |
dc.contributor.author | Senesky, Debbie G. | - |
dc.date.accessioned | 2021-08-02T14:51:56Z | - |
dc.date.available | 2021-08-02T14:51:56Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 1530-437X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19462 | - |
dc.description.abstract | Effects of frost growth on the sensitivity of gallium nitride (GaN) photodetectors were investigated by characterizing electrical and optical properties under dark and 365-nm ultraviolet (UV) illumination from room temperature down to -100°C. The direct wire bonding architecture was used to create aluminum/GaN interdigitated devices for the microfabrication. As the operation temperature decreased below -5°C, the frost formed from humid air was observed on the GaN surface, and photo-to-dark current ratio (sensitivity factor) showed significant reduction (6.76 at room temperature and 2.73 at -100°C under 1 V-bias). The presence of frost on the device surface significantly reduced the absorption of incident UV light into the GaN surfaces (average 85.6% reduction from room temperature to -70°C). This paper supports the characterization of the GaN for UV detection within low-temperature environments, such as cryostats, Arctic research, and space exploration applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | So, Hongyun | - |
dc.identifier.doi | 10.1109/JSEN.2017.2712639 | - |
dc.identifier.scopusid | 2-s2.0-85029388246 | - |
dc.identifier.wosid | 000405691000009 | - |
dc.identifier.bibliographicCitation | IEEE SENSORS JOURNAL, v.17, no.15, pp.4752 - 4756 | - |
dc.relation.isPartOf | IEEE SENSORS JOURNAL | - |
dc.citation.title | IEEE SENSORS JOURNAL | - |
dc.citation.volume | 17 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 4752 | - |
dc.citation.endPage | 4756 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ARCTIC SEA-ICE | - |
dc.subject.keywordPlus | PHOTODIODES | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | WIRE | - |
dc.subject.keywordPlus | FETS | - |
dc.subject.keywordAuthor | Gallium nitride | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | low-temperature environments | - |
dc.subject.keywordAuthor | ultraviolet | - |
dc.subject.keywordAuthor | frost formation | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7939963 | - |
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