Large Wavelength Response to Pressure Enabled in InGaN/GaN Microcrystal LEDs with 3D Architectures
DC Field | Value | Language |
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dc.contributor.author | Yang, Dong Won | - |
dc.contributor.author | Lee, Keundong | - |
dc.contributor.author | Jang, Suhee | - |
dc.contributor.author | Chang, Won Jun | - |
dc.contributor.author | Kim, Su Han | - |
dc.contributor.author | Lee, Jae Hyung | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Il Park, Won | - |
dc.date.accessioned | 2021-07-30T04:53:44Z | - |
dc.date.available | 2021-07-30T04:53:44Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1947 | - |
dc.description.abstract | Optical detection of pressure has the advantage of direct and dynamic indication of the pressure distribution with a high spatial resolution. In this study, microcrystal (mu-crystal) light-emitting diodes (LEDs) that can exhibit an unprecedented large wavelength response to pressure are demonstrated. As a key strategy, three-dimensional InGaN/GaN mu-crystals are engineered to have a hollow core and multiple facets with different multiple quantum well (MQW) structures. The unique structure allows pressure-sensitive modulation of the dominantly emitting MQWs, resulting in an anomalously large change of similar to 50 nm in the ultimate emission wavelength under an external stress of 8 MPa. The underlying mechanism is elucidated via finite-element analysis of the strain development in the mu-crystals and the corresponding piezo-potentials. The results of the study suggest a new capability for dynamic color mapping of the pressure distribution with a high spatial resolution. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Large Wavelength Response to Pressure Enabled in InGaN/GaN Microcrystal LEDs with 3D Architectures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Il Park, Won | - |
dc.identifier.doi | 10.1021/acsphotonics.0c00251 | - |
dc.identifier.scopusid | 2-s2.0-85087688453 | - |
dc.identifier.wosid | 000537445400009 | - |
dc.identifier.bibliographicCitation | ACS PHOTONICS, v.7, no.5, pp.1122 - 1128 | - |
dc.relation.isPartOf | ACS PHOTONICS | - |
dc.citation.title | ACS PHOTONICS | - |
dc.citation.volume | 7 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1122 | - |
dc.citation.endPage | 1128 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SENSOR MATRIX | - |
dc.subject.keywordPlus | PIEZOELECTRIC NANOWIRE | - |
dc.subject.keywordPlus | FUNDAMENTAL THEORY | - |
dc.subject.keywordPlus | SKIN | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | PYRAMIDS | - |
dc.subject.keywordPlus | PIXELS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | micro-LED | - |
dc.subject.keywordAuthor | InGaN/GaN microcrystal | - |
dc.subject.keywordAuthor | pressure sensor | - |
dc.subject.keywordAuthor | optical sensor | - |
dc.subject.keywordAuthor | wavelength change | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsphotonics.0c00251 | - |
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