Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory
- Authors
- Namkoong, Yeon; Yang, Hyung Jun; Song, Yun Heub
- Issue Date
- Jul-2017
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Vertical NAND Flash; Poly-Si Channel Stress; Taper Angle; Annealing Temperature; Intrinsic Stress
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.7, pp.5055 - 5060
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 17
- Number
- 7
- Start Page
- 5055
- End Page
- 5060
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19560
- DOI
- 10.1166/jnn.2017.13739
- ISSN
- 1533-4880
- Abstract
- We investigated the stress distribution and electrical characteristics according to changes in the process parameters in a vertical NAND (VNAND) flash cell with a poly-Si channel. We used technology computer-aided design to confirm that process parameters changes affect the stress distribution in a VNAND flash cell and the stress in the poly-Si channel. Also, we found that, as the stress distributions changed, the electrical characteristics depended significantly on the annealing temperature, channel hole angle, and tungsten intrinsic stress in a VNAND flash cell. Thus, the industry needs to develop and apply better process parameters and acquire a better understanding of how the electrical characteristics of a VNAND flash cell depend on those parameters.
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