Effect of E-Beams Irradiation Dose on the Sensing Properties of Pt-Functionalized Reduced Graphene Oxides Following Annealing of the 6 nm-Thick Pt Layer

Abstract

Pt-functionalized RGO samples were prepared and subsequently irradiated with 2-MeV electron beams (e-beams). The effect of e-beam dose on the structural, electrical, and gas sensing properties of the samples was investigated. E-beam irradiation was found to induce significant microstructural changes in the Pt-functionalized RGO. Measurements of NO₂ sensing at room temperature showed that the dose of 100 kGy led to better NO₂ sensing properties compared to those of unirradiated sensors. On the other hand, the dose of 500 kGy appeared to be excessive, leading to extensive damage of the RGO structure and a significant reduction in the response to NO₂ gas. E-beam irradiation can be beneficial for improving the gas sensing of Pt-functionalized RGO, but its dose needs to be optimized to obtain the best sensing properties.