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GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, SangHoon | - |
| dc.contributor.author | Park, YounHo | - |
| dc.contributor.author | Koo, HyunCheol | - |
| dc.contributor.author | Song, YunHeub | - |
| dc.contributor.author | Song, JinDong | - |
| dc.date.accessioned | 2021-08-02T14:53:24Z | - |
| dc.date.available | 2021-08-02T14:53:24Z | - |
| dc.date.issued | 2017-07 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19568 | - |
| dc.description.abstract | We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 ㎠/Vs and high carrier concentration of 4.3 x 10¹²/㎠ at RT. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | The Korean Physical Society | - |
| dc.title | GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.1016/j.cap.2017.03.018 | - |
| dc.identifier.scopusid | 2-s2.0-85016423762 | - |
| dc.identifier.wosid | 000401081400015 | - |
| dc.identifier.bibliographicCitation | Current Applied Physics, v.17, no.7, pp 1005 - 1008 | - |
| dc.citation.title | Current Applied Physics | - |
| dc.citation.volume | 17 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 1005 | - |
| dc.citation.endPage | 1008 | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002224345 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | WELL | - |
| dc.subject.keywordAuthor | 2DHG | - |
| dc.subject.keywordAuthor | GaSb | - |
| dc.subject.keywordAuthor | Hole mobility | - |
| dc.subject.keywordAuthor | Lattice mismatch | - |
| dc.subject.keywordAuthor | III-V CMOS | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1567173917300937?via%3Dihub | - |
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)