Cited 22 time in
Organic electronic synapses with pinched hystereses based on graphene quantum-dot nanocomposites
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Hwan Young | - |
| dc.contributor.author | Wu, Chaoxing | - |
| dc.contributor.author | Bok, Chang Han | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.date.accessioned | 2021-08-02T14:53:40Z | - |
| dc.date.available | 2021-08-02T14:53:40Z | - |
| dc.date.issued | 2017-07 | - |
| dc.identifier.issn | 1884-4049 | - |
| dc.identifier.issn | 1884-4057 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19583 | - |
| dc.description.abstract | Organic electronic synapses (e-synapses) based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/graphene quantum dot (GQD) nanocomposites are fabricated by using a solution method. Current-voltage (I-V) curves for the devices under dual positive bias voltage sweeps show that the conductance with a pinched hysteresis gradually increased with increasing applied voltage, and those for the devices under dual negative bias voltage sweeps gradually decreased with increasing applied voltage, indicative of the fingerprint of e-synapses. The current in the devices decreases with increasing concentration of GQDs in the active layer, and the devices fabricated utilizing the ratio of PEDOT: PSS to GQDs of 1:0.4 shows the best performance among the e-synapses. The carrier transport and operating mechanisms of the e-synapses are described on the basis of both the I-V results and the trapping and escape of electrons from the GQDs. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Nature Publishing Group | - |
| dc.title | Organic electronic synapses with pinched hystereses based on graphene quantum-dot nanocomposites | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1038/am.2017.133 | - |
| dc.identifier.scopusid | 2-s2.0-85078660158 | - |
| dc.identifier.wosid | 000406941100005 | - |
| dc.identifier.bibliographicCitation | NPG Asia Materials, v.9, pp 1 - 6 | - |
| dc.citation.title | NPG Asia Materials | - |
| dc.citation.volume | 9 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 6 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
| dc.subject.keywordPlus | POLYMER LAYERS | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | MEMRISTOR | - |
| dc.subject.keywordPlus | SYSTEMS | - |
| dc.identifier.url | https://www.nature.com/articles/am2017133 | - |
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