Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes
DC Field | Value | Language |
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dc.contributor.author | Sung, Sihyun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T14:53:41Z | - |
dc.date.available | 2021-08-02T14:53:41Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19584 | - |
dc.description.abstract | Flexible nonvolatile memory (NVM) devices fabricated utilizing Au nanoparticles (AuNPs) embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated on a silver nanowire (AgNW) or a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/AgNW coated on poly(ethylene terephthalate) (PET) substrates. The transmittance and the sheet resistance of the PEDOT:PSS/AgNW hybrid layer were approximately 89% and 50 Omega/sq, respectively, which were comparable to the values for commercial indium-tin-oxide (ITO) electrodes. Current-voltage curves for the Al/PMMA:AuNP/PEDOT:PSS/AgNW/PET devices at 300 K showed clockwise current hysteresis behaviors due to the existence of the AuNPs. The endurance number of ON/OFF switching for the NVM devices was above 30 cycles. An ON/OFF ratio of 1 x 10(3) was maintained for retention times longer than 1 x 10(4) s. The maximum memory margins of the NVM devices before and after bending were approximately 3.4 x 10(3) and 1.4 x 10(3), respectively. The retention times of the devices before and after bending remained same 1 x 10(4) s. The memory margin and the stability of flexible NVMs fabricated on AgNW electrodes were enhanced due to the embedded PEDOT:PSS buffer layer. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.apsusc.2017.03.112 | - |
dc.identifier.scopusid | 2-s2.0-85016309341 | - |
dc.identifier.wosid | 000401391900008 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.411, pp.67 - 72 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 411 | - |
dc.citation.startPage | 67 | - |
dc.citation.endPage | 72 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | CONDUCTING POLYMER ANODES | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | PEDOT:PSS/AgNW | - |
dc.subject.keywordAuthor | Flexible NVM | - |
dc.subject.keywordAuthor | Nanocomposite | - |
dc.subject.keywordAuthor | Electrical characteristic | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433217307717?via%3Dihub | - |
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