Cited 0 time in
Electronic Synaptic Devices with High Thermostability Induced by Embedded Tungsten Disulfide Quantum Dots for Machine Learning
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안호군 | - |
| dc.contributor.author | An, Jun Seop | - |
| dc.contributor.author | Li, Mingjun | - |
| dc.contributor.author | Kim, Youngjin | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.date.accessioned | 2024-11-28T10:31:08Z | - |
| dc.date.available | 2024-11-28T10:31:08Z | - |
| dc.date.issued | 2023-02 | - |
| dc.identifier.issn | 2199-160X | - |
| dc.identifier.issn | 2199-160X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/196125 | - |
| dc.description.abstract | If the speed of machine learning is to be improved, devices and systems with strong resistances to various types of internal noise, mainly internal thermal noise, are urgently needed. The successful demonstration of a synaptic device is reported based on a polyimide–tungsten disulfide quantum dot (PI-WS2 QD) nanocomposite that continued to operate normally after simultaneous exposure of a high temperature of 100 °C. Such excellent performance is attributable to the strong quantum confinement effect of WS2 QDs. The working current of the device and its power consumption are on the orders of nanoamperes and femtojoules, respectively. Undoubtedly, such devices will significantly improve the physical performances of machine learning systems and allow the rapid realization of greatly improving machine learning speed. | - |
| dc.format.extent | 8 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Wiley-VCH Verlag | - |
| dc.title | Electronic Synaptic Devices with High Thermostability Induced by Embedded Tungsten Disulfide Quantum Dots for Machine Learning | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1002/aelm.202200876 | - |
| dc.identifier.scopusid | 2-s2.0-85142223823 | - |
| dc.identifier.wosid | 000888774600001 | - |
| dc.identifier.bibliographicCitation | Advanced Electronic Materials, v.9, no.2, pp 1 - 8 | - |
| dc.citation.title | Advanced Electronic Materials | - |
| dc.citation.volume | 9 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 8 | - |
| dc.type.docType | Article; Early Access | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | CHARGE-LIMITED CURRENTS | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | CONDUCTION | - |
| dc.subject.keywordPlus | INSULATOR | - |
| dc.subject.keywordAuthor | high thermal stability | - |
| dc.subject.keywordAuthor | quantum confinement effect | - |
| dc.subject.keywordAuthor | synaptic devices | - |
| dc.subject.keywordAuthor | tunneling current | - |
| dc.subject.keywordAuthor | WS2 quantum dots | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/aelm.202200876 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
