STT-MRAM Read-circuit with Improved Offset Cancellation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong-Gi | - |
dc.contributor.author | Park, Sang-Gyu | - |
dc.date.accessioned | 2021-08-02T14:54:37Z | - |
dc.date.available | 2021-08-02T14:54:37Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19669 | - |
dc.description.abstract | We present a STT-MRAM read-circuit which mitigates the performance degradation caused by offsets from device mismatches. In the circuit, a single current source supplies read-current to both the data and the reference cells sequentially eliminating potential mismatches. Furthermore, an offset-free pre-amplification using a capacitor storing the mismatch information is employed to lessen the effect of the comparator offset. The proposed circuit was implemented using a 130-nm CMOS technology and Monte Carlo simulations of the circuit demonstrate its effectiveness in suppressing the effect of device mismatch. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.title | STT-MRAM Read-circuit with Improved Offset Cancellation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Sang-Gyu | - |
dc.identifier.doi | 10.5573/JSTS.2017.17.3.347 | - |
dc.identifier.scopusid | 2-s2.0-85021700520 | - |
dc.identifier.wosid | 000406939500005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.17, no.3, pp.347 - 353 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 17 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 347 | - |
dc.citation.endPage | 353 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002232920 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SENSE AMPLIFIER | - |
dc.subject.keywordAuthor | STT-MRAM | - |
dc.subject.keywordAuthor | read-circuit | - |
dc.subject.keywordAuthor | offset cancellation | - |
dc.subject.keywordAuthor | sensing margin | - |
dc.identifier.url | http://koreascience.or.kr/article/JAKO201719558339580.page | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.