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A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ku, Boncheol | - |
| dc.contributor.author | Sim, Jae-Min | - |
| dc.contributor.author | Hur, Jae Seok | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.contributor.author | Song, Yun-Heub | - |
| dc.contributor.author | Choi, Changhwan | - |
| dc.date.accessioned | 2024-11-28T16:31:33Z | - |
| dc.date.available | 2024-11-28T16:31:33Z | - |
| dc.date.issued | 2024-05 | - |
| dc.identifier.issn | 0000-0000 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/197721 | - |
| dc.description.abstract | We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec, large memory window (MW) of 2.5V, 2 bits/cell, and reliable 10-years retention are reported. Furthermore, new Gate-All-Around with Back-Gate (GAAB) structure and operation scheme are proposed to increase MW by improving the channel potential controllability and enhance resistance against disturb for Multi-Level Cell(MLC) operation. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | A Novel 3D Gate-All-Around Vertical FeFET with Back-Gate Structure for Disturbance-Less Program Operation | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/IMW59701.2024.10536939 | - |
| dc.identifier.scopusid | 2-s2.0-85195403172 | - |
| dc.identifier.wosid | 001233896700004 | - |
| dc.identifier.bibliographicCitation | 2024 IEEE International Memory Workshop, IMW 2024 - Proceedings, pp 1 - 4 | - |
| dc.citation.title | 2024 IEEE International Memory Workshop, IMW 2024 - Proceedings | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 4 | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Computer Science | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Computer Science, Hardware & Architecture | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | Hafnium oxides | - |
| dc.subject.keywordPlus | Indium compounds | - |
| dc.subject.keywordPlus | Zirconium compounds | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
- 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)