Atomic layer deposition of tin monosulfide thin film using Sn(acac)2 and H2S

Abstract

In this study, we deposited tin monosulfide (SnS) thin film using Tin(II) 2,4-pentanedionate [Sn(acac)2] precursor and hydrogen sulfide (H2S) reactant. And we performed post annealing to improve the crystallinity of SnS thin films. The process window was 130 °C–150 °C, and the growth rate was 0.34 Å/cycle. To investigate crystallinity and the phase of SnS thin films, grazing incidence x-ray diffraction (GI-XRD) and Raman spectroscopy were performed. SnS thin films showed a single orthorhombic phase after annealing. In addition, transmission electron microscopy (TEM) was utilized to confirm the two-dimensional (2D) layered structure of SnS thin films. Post-annealed SnS thin film clearly showed a 2D layered structure. X-ray photoelectron spectroscopy (XPS) was performed to confirm the bonding state of the thin film. The results indicated that the SnS thin film only shows binding energies corresponding to the oxidation states of Sn2+ in the Sn 3d spectra and S2- in the S 2p spectra. Ultraviolet–visible (UV–vis) spectroscopy and ultraviolet photoelectron spectroscopy (UPS) were performed to confirm the optical properties and to calculate the band structure of the thin film. All of SnS thin film showed a p-type characteristic. The post-annealed SnS thin films exhibited better electric properties, confirmed by Hall measurement.