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Elimination of unavoidable doping effects by passivation layers in InSe field-effect transistor via polymer/dopant composite treatment
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정문석 | - |
| dc.date.accessioned | 2024-12-05T21:00:26Z | - |
| dc.date.available | 2024-12-05T21:00:26Z | - |
| dc.date.issued | 2023-12-05 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/201543 | - |
| dc.title | Elimination of unavoidable doping effects by passivation layers in InSe field-effect transistor via polymer/dopant composite treatment | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | ICAMD 2023 | - |
| dc.citation.conferencePlace | 제주 라마다호텔 | - |
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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Related Researcher
- Jeong, Mun Seok
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)