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Effect of permanganate treatment on through mold vias for an embedded wafer level package

Authors
Park, Se-HoonPark, Ji-YeonKim, Young-Ho
Issue Date
Jul-2013
Publisher
대한금속·재료학회
Keywords
through mold via (TMV); desmear treatment; permanganate; laser drilling; electroless Cu plating; embedded wafer level package
Citation
Electronic Materials Letters, v.9, no.4, pp 459 - 462
Pages
4
Indexed
SCIE
SCOPUS
KCICANDI
Journal Title
Electronic Materials Letters
Volume
9
Number
4
Start Page
459
End Page
462
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/202876
DOI
10.1007/s13391-013-0011-7
ISSN
1738-8090
2093-6788
Abstract
In this study, a through mold via (TMV) interconnect was developed for an embedded wafer level package (EMWLP) to enable 3D packing applications. The effects of the shape and surface roughness of the epoxy molding wafer on the quality of electroless Cu metallization were investigated for the vertical interconnection. The mold compound is a composite material composed of epoxy resin and filler particles. Therefore, the effect of the amount of filler particles was studied to optimize the shape of the epoxy molding by applying two types of laser drilling modes. In addition, the electroless Cu plating process was optimized to deposit a Cu seed layer along the TMV sidewall. To optimize the TMV process, a desmear process was applied to improve the shape of the TMV sidewall and adhesion between the epoxy molding compound and the dielectric polymer for multilayer metallization.
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