Investigation of the Effect of Grain for Vertically Stacked NAND Flash Memory with a Poly-GaAs Channel
DC Field | Value | Language |
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dc.contributor.author | Oh, Young-Taek | - |
dc.contributor.author | Shin, Sang-Hoon | - |
dc.contributor.author | Kim, Kyu-Beom | - |
dc.contributor.author | Song, Yun-Heub | - |
dc.date.accessioned | 2021-08-02T15:26:34Z | - |
dc.date.available | 2021-08-02T15:26:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-05 | - |
dc.identifier.issn | 1941-4900 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20353 | - |
dc.description.abstract | The cell characteristics of a vertically stacked NAND (V-NAND) flash memory with a poly-GaAs channel are investigated for the effect of grain using a three-dimensional simulation method, and they are compared to V-NAND with a poly-silicon channel. Under the same physical conditions, it is confirmed that the initial status of the V-NAND flash memory with a poly-GaAs channel shows a higher drain current and higher threshold voltage, which provides a better feasibility to improve the V-NAND flash memory. Due to the grain, V-NAND flash memory with a poly-GaAs channel shows more degradation in cell characteristics as the grain length decreases and the trap density in the grain boundary increases, compared to the V-NAND with a poly-silicon channel. Here, we explain that the higher energy band diagram in the poly-GaAs channel causes these results. The values of the trap density and grain length in the poly-GaAs channel are very important; the trap density should be maintained at a value less than 9e-13 cm(-2)eV(-1) and the grain length should be maintained at a value more than 50 nm in order to obtain better cell characteristics compared to the V-NAND with a poly-Si channel. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Investigation of the Effect of Grain for Vertically Stacked NAND Flash Memory with a Poly-GaAs Channel | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun-Heub | - |
dc.identifier.doi | 10.1166/nnl.2017.2381 | - |
dc.identifier.scopusid | 2-s2.0-85020497935 | - |
dc.identifier.wosid | 000405312800018 | - |
dc.identifier.bibliographicCitation | NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.9, no.5, pp.736 - 740 | - |
dc.relation.isPartOf | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.title | NANOSCIENCE AND NANOTECHNOLOGY LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 736 | - |
dc.citation.endPage | 740 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | 3D NAND Flash Memory | - |
dc.subject.keywordAuthor | GaAs Channel | - |
dc.subject.keywordAuthor | Grain Boundary | - |
dc.subject.keywordAuthor | TCAD Simulation | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/nnl/2017/00000009/00000005/art00018 | - |
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