Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method
DC Field | Value | Language |
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dc.contributor.author | Kim, Kyungjun | - |
dc.contributor.author | Choi, Chulmin | - |
dc.contributor.author | Oh, Youngtaek | - |
dc.contributor.author | Sukegawa, Hiroaki | - |
dc.contributor.author | Mitani, Seiji | - |
dc.contributor.author | Song, Yunheub | - |
dc.date.accessioned | 2021-08-02T15:29:12Z | - |
dc.date.available | 2021-08-02T15:29:12Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20447 | - |
dc.description.abstract | Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yunheub | - |
dc.identifier.doi | 10.7567/JJAP.56.04CN02 | - |
dc.identifier.scopusid | 2-s2.0-85017191680 | - |
dc.identifier.wosid | 000414623100070 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 56 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | INSERTION | - |
dc.identifier.url | http://dx.doi.org/10.7567/JJAP.56.04CN02 | - |
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