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Field-Effect Mobility Enhancement of a-InGaZnO Thin Film Transistors through Metal Capping Layer Oxidation Induced Carrier Boosting
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이승백 | - |
| dc.date.accessioned | 2025-01-07T04:00:26Z | - |
| dc.date.available | 2025-01-07T04:00:26Z | - |
| dc.date.issued | 2024-04-24 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/204800 | - |
| dc.title | Field-Effect Mobility Enhancement of a-InGaZnO Thin Film Transistors through Metal Capping Layer Oxidation Induced Carrier Boosting | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2024 MRS spring meeting | - |
| dc.citation.conferencePlace | Seattle Convention Center, Seattle Washington, USA | - |
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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- Lee, Seung Beck
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)