Hole-extraction layer dependence of defect formation and operation of planar CH3NH3PbI3 perovskite solar cells
- Authors
- Duc Cuong Nguyen; Joe, Sung-yoon; Ha, Na Young; Park, Hui Joon; Park, Ji-Yong; Ahn, Y. H.; Lee, Soonil
- Issue Date
- Feb-2017
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- CH3NH3PbI3; solar cells; interface defects; bulk defects; charge carrier recombination; capacitance
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.11, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- Volume
- 11
- Number
- 2
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/20557
- DOI
- 10.1002/pssr.201600395
- ISSN
- 1862-6254
- Abstract
- Three planar CH3NH3PbI3 (MAPbI(3)) solar cells having the same structure except a hole-extraction layer (HEL) showed distinctive difference in operation characteristics. Analysis of frequency-dependent capacitance and dielectric-loss spectra of the three MAPbI(3) devices showed two types of recombination-loss channels with different time constants that we attributed respectively to interface and bulk defects. Discrepancy in defect formation among the three devices with a HEL of PEDOT: PSS, NiOx, or Cu-doped NiOx was not surprising because grain-size distribution and crystalline quality of MAPbI(3) can be affected by surface energy and morphology of underlying HELs. We were able to quantify interface and bulk defects in these MAPbI(3) solar cells based on systematic and simultaneous simulations of capacitance and dielectricloss spectra, and current-voltage characteristics by using the device simulator SCAPS. [GRAPHICS] . Defect density reduction is essential for efficient planar solar cells. Defect density in MAPbI(3) layers, with respect to which an open-cell voltage and a fill factor vary, can be investigated by using capacitance-frequency spectra.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 유기나노공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.