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Modulation of Channel Potential in γ-InSe Transistor via Sliding Ferroelectricity

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dc.contributor.author정문석-
dc.date.accessioned2025-01-10T00:30:21Z-
dc.date.available2025-01-10T00:30:21Z-
dc.date.issued2024-11-19-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/205813-
dc.titleModulation of Channel Potential in γ-InSe Transistor via Sliding Ferroelectricity-
dc.typeConference-
dc.citation.conferenceNameN2D 2024-
dc.citation.conferencePlace스위스 그랜드 호텔-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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