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Doping evolution of the electronic response of the kagome metal Cs(V1-xTix)3Sb5

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dc.contributor.authorKim, Dongwook-
dc.contributor.authorNam, H. W.-
dc.contributor.authorSur, Yeahan-
dc.contributor.authorKim, Kwang-Tak-
dc.contributor.authorKim, Kee Hoon-
dc.contributor.authorMoon, S. J.-
dc.date.accessioned2025-05-20T02:30:20Z-
dc.date.available2025-05-20T02:30:20Z-
dc.date.issued2025-04-
dc.identifier.issn2469-9950-
dc.identifier.issn2469-9969-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/207382-
dc.description.abstractThe vanadium-based kagome metal CsV3Sb5 has drawn significant interest since it exhibits a wide variety of intriguing topological phases and electronic instabilities. A prominent example includes an unconventional charge-density wave (CDW), which is associated with the Van Hove singularities (vHss). Hole doping of the system via substitution of Ti for V is expected to shift the vHss, providing an effective way to tune the Fermi surface instabilities in CsV3Sb5. We investigate the optical response of Cs(V1-xTix)3Sb5 (x = 0, 0.01, 0.02, and 0.06) single crystals by utilizing infrared spectroscopy. The infrared signature of the CDW order, i.e., the decrease in the low-energy spectral weight and the appearance of the absorption peak at about 200 meV, is suppressed upon Ti doping (x = 0.02) and completely disappears for x = 0.06. Nevertheless, the ratio of the CDW gap ACDW to the CDW transition temperature (TCDW), i.e., 2ACDW/kBTCDW is increased with Ti substitution. In the normal state, the spectral weight of the intraband response is abruptly suppressed with Ti doping (x 0.02), suggesting a significant increase in the effective mass of the itinerant carriers due to the shift of the vHs toward the Fermi level. The evolutions of the CDW phase and the normal-state charge dynamics reveal the crucial role of the electronic correlations in the Cs(V1-xTix)3Sb5 system.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER PHYSICAL SOC-
dc.titleDoping evolution of the electronic response of the kagome metal Cs(V1-xTix)3Sb5-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1103/PhysRevB.111.165151-
dc.identifier.scopusid2-s2.0-105003860948-
dc.identifier.wosid001478815800005-
dc.identifier.bibliographicCitationPhysical Review B, v.111, no.16, pp 1 - 7-
dc.citation.titlePhysical Review B-
dc.citation.volume111-
dc.citation.number16-
dc.citation.startPage1-
dc.citation.endPage7-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusCHARGE-DENSITY-WAVE-
dc.subject.keywordPlusORDER-
dc.subject.keywordPlusINSTABILITY-
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.111.165151-
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