Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Improving Electrical Properties of ALD SnO2 by Engineering Oxygen Vacancy and Al doping method
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 전형탁 | - |
| dc.date.accessioned | 2025-07-18T23:00:20Z | - |
| dc.date.available | 2025-07-18T23:00:20Z | - |
| dc.date.issued | 2025-05-30 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/208291 | - |
| dc.title | Improving Electrical Properties of ALD SnO2 by Engineering Oxygen Vacancy and Al doping method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체디스플레이학회 | - |
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.