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Effect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics

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dc.contributor.authorAn, Byung-Kwon-
dc.contributor.authorKim, Seong-Beom-
dc.contributor.authorSong, Yun Heub-
dc.date.accessioned2021-07-30T04:54:51Z-
dc.date.available2021-07-30T04:54:51Z-
dc.date.created2021-05-11-
dc.date.issued2020-02-
dc.identifier.issn1598-1657-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2088-
dc.description.abstractIn this paper, Effect of bottom electrode size on Ovonic Threshold Switch(OTS) characteristics has been investigated in W/SiTe/W selector device. We fabricated SiTe Ovonic Threshold Switch(OTS) with different bottom electrode contact totally 18 sizes (34 nm - 1921 nm) and studied the differences in the bottom electrode size I-V characteristics. Ovonic Threshold Switch(OTS) device showed on/off ratio (> 10(3)) and the difference in V-t value between 218 nm and 1414 nm size.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEK PUBLICATION CENTER-
dc.titleEffect of Bottom Electrode Size on Ovonic Threshold Switch(OTS) Characteristics-
dc.typeArticle-
dc.contributor.affiliatedAuthorSong, Yun Heub-
dc.identifier.doi10.5573/JSTS.2020.20.1.008-
dc.identifier.scopusid2-s2.0-85081166973-
dc.identifier.wosid000517825600002-
dc.identifier.bibliographicCitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.20, no.1, pp.8 - 11-
dc.relation.isPartOfJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.titleJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE-
dc.citation.volume20-
dc.citation.number1-
dc.citation.startPage8-
dc.citation.endPage11-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART002561694-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusPhase change memory-
dc.subject.keywordPlusSilicon-
dc.subject.keywordPlusSilicon compounds-
dc.subject.keywordPlusTellurium compounds-
dc.subject.keywordPlusElectrodes-
dc.subject.keywordPlusBottom electrode contacts-
dc.subject.keywordPlusBottom electrodes-
dc.subject.keywordPlusDifferent electrode bottom size-
dc.subject.keywordPlusIV characteristics-
dc.subject.keywordPlusOn/off ratio-
dc.subject.keywordPlusPhase change random access memory-
dc.subject.keywordPlusPRAM-
dc.subject.keywordPlusThreshold switches-
dc.subject.keywordAuthorOvonic threshold switch-
dc.subject.keywordAuthorOTS-
dc.subject.keywordAuthorphase change random access memory-
dc.subject.keywordAuthorPRAM-
dc.subject.keywordAuthordifferent electrode bottom size-
dc.subject.keywordAuthorswitch characteristics-
dc.identifier.urlhttps://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE09307358&language=ko_KR&hasTopBanner=true-
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