Advancing YOLOv8-Based Wafer Notch-Angle Detection Using Oriented Bounding Boxes, Hyperparameter Tuning, Architecture Refinement, and Transfer Learning

Abstract

Accurate angular alignment of wafers is essential in ion implantation to prevent channeling effects that degrade device performance. This study proposes a real-time notch-angle-detection system based on you only look once version 8 with oriented bounding boxes (YOLOv8-OBB). The proposed method compares YOLOv8 and YOLOv8-OBB, demonstrating the superiority of the latter in accurately capturing rotational features. To enhance detection performance, hyperparameters-including initial learning rate (Lr0), weight decay, and optimizer-are optimized using an one factor at a time (OFAT) approach followed by grid search. Architectural improvements, including spatial pyramid pooling fast with large selective kernel attention (SPPF_LSKA), a bidirectional feature pyramid network (BiFPN), and a high-resolution detection head (P2 head), are incorporated to improve small-object detection. Furthermore, a gradual unfreezing strategy is employed to support more effective and stable transfer learning. The final system is evaluated over 100 training epochs and tracked up to 5000 epochs to verify long-term stability. Compared to baseline models, it achieves higher accuracy and robustness in angle-sensitive scenarios, offering a reliable and scalable solution for high-precision wafer-notch detection in semiconductor manufacturing.