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Optimizing Green Perovskite Light-Emitting Diodes through a Solution-Processed Triple-Layer HTL Strategy

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dc.contributor.authorKim, Gwang-il-
dc.contributor.authorMo, Yurim-
dc.contributor.authorNa, Hyejin-
dc.contributor.authorLee, Seon Joo-
dc.contributor.authorChoi, Sungho-
dc.contributor.authorChoi, Hyosung-
dc.contributor.authorLee, Jaemin-
dc.date.accessioned2025-12-08T00:30:26Z-
dc.date.available2025-12-08T00:30:26Z-
dc.date.issued2024-06-
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/209511-
dc.description.abstractImproving hole injection/transport and achieving charge balance through a multilayer hole-transporting layer (HTL) structure is a key technology for enhancing the performance of perovskite light-emitting diodes (PeLEDs). However, the stacking of a multilayer HTL through a solution process is constrained by the issue of erosion. We propose the use of 1,2-dichloroethane (DCE) as an orthogonal solvent for PTAA HTL, and a triple-layer HTL of [PTAA/TFB/PVK] was successfully realized solely through a solution-process. With an increase in the number of HTLs, there was an observed rise in external quantum efficiency (EQE) and a simultaneous reduction in turn-on voltage (Von) of the PeLED devices, attributed to a gradual decrease in the hole-injection barrier. In addition to the HTL, the integration of a double-layer electron-transporting layer (ETL) of [TPBi/PO-T2T] further enhanced overall device performance, resulting in a maximum EQE over 12 % and a Von as low as 2.22 V. The source of this enhancement was also investigated through time-resolved photoluminescence analysis and single-carrier device characterizations.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleOptimizing Green Perovskite Light-Emitting Diodes through a Solution-Processed Triple-Layer HTL Strategy-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LED.2024.3387982-
dc.identifier.scopusid2-s2.0-85190334781-
dc.identifier.wosid001230989200035-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.45, no.6, pp 1028 - 1031-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume45-
dc.citation.number6-
dc.citation.startPage1028-
dc.citation.endPage1031-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusPOLYMERS-
dc.subject.keywordAuthorSolvents-
dc.subject.keywordAuthorFilms-
dc.subject.keywordAuthorPerovskites-
dc.subject.keywordAuthorNonhomogeneous media-
dc.subject.keywordAuthorPerformance evaluation-
dc.subject.keywordAuthorOrganic light emitting diodes-
dc.subject.keywordAuthorIndium tin oxide-
dc.subject.keywordAuthorHole-transporting layers-
dc.subject.keywordAuthorlight emitting diodes-
dc.subject.keywordAuthorperovskites-
dc.subject.keywordAuthorquantum dots-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/10497568-
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