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A Reconfigurable Bidirectional Wireless Power and Full-Duplex Data Transceiver IC for Wearable Biomedical Applications

Authors
Lee, JunhyuckKim, YeminKang, DongilSong, IckhyunLee, Byunghun
Issue Date
Aug-2025
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Data communication; Wireless communication; Uplink; Transceivers; Downlink; Frequency shift keying; Wireless sensor networks; Full-duplex system; Biomedical monitoring; Wearable devices; Wireless power transfer (WPT); wireless power and data transfer (WPDT); reconfigurable transceiver; full-duplex (FD) data transmission; bidirectional wireless power and data transfer; inductive link, wearable device
Citation
IEEE Transactions on Biomedical Circuits and Systems, v.19, no.4, pp 767 - 776
Pages
10
Indexed
SCIE
SCOPUS
Journal Title
IEEE Transactions on Biomedical Circuits and Systems
Volume
19
Number
4
Start Page
767
End Page
776
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/210012
DOI
10.1109/TBCAS.2024.3483950
ISSN
1932-4545
1940-9990
Abstract
This paper presents a reconfigurable bidirectional wireless power and data transceiver (RB-WPDT) integrated circuit (IC) for wearable biomedical applications. The proposed transceiver can be reconfigured as a differential class-D power amplifier or a full-wave rectifier depending on the mode signal to facilitate power transfer between devices. Additionally, the RBWPDT system supports full-duplex (FD) data transmission via a single inductive link, enabling real-time control and monitoring between devices. The proposed FD method utilizes frequency shift-keying pulse-width modulation (FSK-PWM) for downlink and load shift-keying (LSK) for uplink, achieving simultaneous bidirectional data transmission by ensuring that the FSK-PWM downlink and LSK uplink data channels operate independently with minimal interference. The measured downlink and uplink data rates are 250 kb/s and 67 kb/s, respectively. The measured overall DC-to-DC efficiency is 49%, while the power delivered to the load (PDL) is 120 mW at a 5 mm distance. The proposed chip is fabricated using a 180-nm BCD CMOS process.
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COLLEGE OF ENGINEERING (서울 바이오메디컬공학전공)
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