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Highly Uniform and Flicker-Free Pixel Circuit for Wide Variable Refresh Rate AMOLED Displays

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dc.contributor.authorWee, Sung-Min-
dc.contributor.authorKim, Younsik-
dc.contributor.authorChung, Kyung-Hoon-
dc.contributor.authorYu, Byungchang-
dc.contributor.authorLim, Jaemyung-
dc.contributor.authorKwon, Oh-Kyong-
dc.date.accessioned2026-03-30T02:02:17Z-
dc.date.available2026-03-30T02:02:17Z-
dc.date.issued2025-12-
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/211749-
dc.description.abstractThis letter proposes a 9T2C AMOLED pixel circuit that achieves high luminance uniformity and low flicker across a wide variable refresh rate (VRR) range of 15 to 360 Hz using LTPS TFTs. To enhance uniformity, the circuit compensates for threshold voltage (ΔV<inf>TH</inf>) and subthreshold slope (ΔSS) variations of the driving TFT by securing sufficient compensation time and employing a diode-connected current sink method. Flicker is significantly reduced by alleviating the effects of switching TFT leakage current, driving TFT hysteresis, and OLED parasitic capacitance (C<inf>OLED</inf>) through a pulse-referenced method and maximum refresh rate (MRR) driving method. The circuit was fabricated on a 14-inch 4K AMOLED panel and experimentally verified. The measured worst-case spatial emission current errors (SECEs) were +2.8/-2.9 LSB and +0.4/-0.4 LSB at high and low gray levels, respectively. Regarding flicker, the worst temporal errors (TECEs) were measured to -1.7 LSB and +0.3 LSB at high and low gray levels, respectively. © 2025 Elsevier B.V., All rights reserved.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleHighly Uniform and Flicker-Free Pixel Circuit for Wide Variable Refresh Rate AMOLED Displays-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LED.2025.3617005-
dc.identifier.scopusid2-s2.0-105018022463-
dc.identifier.wosid001632650100006-
dc.identifier.bibliographicCitationIEEE ELECTRON DEVICE LETTERS, v.46, no.12, pp 2285 - 2288-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume46-
dc.citation.number12-
dc.citation.startPage2285-
dc.citation.endPage2288-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusSI-
dc.subject.keywordAuthorFluctuations-
dc.subject.keywordAuthorLogic gates-
dc.subject.keywordAuthorHysteresis-
dc.subject.keywordAuthorThin film transistors-
dc.subject.keywordAuthorLeakage currents-
dc.subject.keywordAuthorActive matrix organic light emitting diodes-
dc.subject.keywordAuthorSwitches-
dc.subject.keywordAuthorCurrent measurement-
dc.subject.keywordAuthorThreshold voltage-
dc.subject.keywordAuthorAnodes-
dc.subject.keywordAuthorAMOLED-
dc.subject.keywordAuthorVRR-
dc.subject.keywordAuthorflicker-
dc.subject.keywordAuthorpixel circuit-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/11192479-
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