Digital Control Technique of Active Gate Driver Based on Real-Time Measurement for Overshoot and Switching Loss Reduction in WBG Power Semiconductors

Abstract

This paper presents an independent control method for overshoot and switching losses, which leverages realtime measurements of overshoot magnitude and transient interval duration to address the limitations of conventional model-based control approaches that require highly accurate modeling. The proposed method divides the switching transient into two distinct regions: an overshoot control region and a switching loss control region, thereby enabling independent regulation of these two factors. In addition, the measured overshoot and transient duration are incorporated into the switching loss calculation, improving its computational accuracy. The effectiveness of the proposed approach is validated through simulations that verify the enhanced accuracy of switching loss estimation and experimentally demonstrated using a 1.7 kV SiC MOSFET module, confirming its capability to independently control overshoot and switching losses.