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Ultra-low-energy physical unclonable function enabled by trap-engineered ferroelectric tunnel junction crossbar
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Youn, Sangwook | - |
| dc.contributor.author | Hwang, Hwiho | - |
| dc.contributor.author | Kim, Hyungjin | - |
| dc.date.accessioned | 2026-05-09T05:00:45Z | - |
| dc.date.available | 2026-05-09T05:00:45Z | - |
| dc.date.issued | 2026-06 | - |
| dc.identifier.issn | 2211-2855 | - |
| dc.identifier.issn | 2211-3282 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/212515 | - |
| dc.description.abstract | Ferroelectric tunnel junctions (FTJs) have emerged as promising building blocks for energy-efficient and reconfigurable hardware security owing to their nonvolatility, scalability, and polarization-dependent tunneling transport. Here, we demonstrate an ultra-low-energy physical unclonable function (PUF) implemented using a 48 × 48 FTJ crossbar array based on a TiN/HZO/SiO2/n+-poly-Si metal–ferroelectric–insulator–semiconductor (MFIS) stack. All 2304 FTJ devices exhibit uniform and repeatable switching behavior with endurance (>103 cycles) and retention (>104 s), enabling reliable large-scale array operation. High-pressure annealing (HPA) is introduced to suppress defect activity in the HZO layer, which is experimentally verified by low-frequency noise (LFN) analysis. The LFN spectra reveal a clear transition from trap-induced 1/f noise to shot-noise-dominant behavior, indicating effective passivation of oxygen-vacancy-related traps and stabilization of direct tunneling in the high-resistance state (HRS). As a result, the HRS read current becomes nearly temperature independent at low bias, providing a robust entropy source for PUF operation. Based on a differential current-summation and comparison scheme, the FTJ crossbar PUF achieves a vast challenge–response pair (CRP) space of approximately 1027, enabling strong resistance to brute-force attacks. Owing to the HPA-induced tunneling stabilization, the proposed PUF exhibits a bit error rate (BER) below 1% even at 100 °C without any error-correction circuitry. Furthermore, the PUF operates with an ultralow bit-level energy consumption of 96 aJ, enabled by direct-tunneling-dominant transport and low-voltage readout. Statistical evaluations confirm nearly ideal uniformity, diffuseness, and uniqueness, while intrinsic cycle-to-cycle variation allows fully reconfigurable key generation without hardware modification. The generated responses successfully pass all NIST SP 800–22 randomness tests and show strong resilience against machine-learning-based modeling attacks. These results establish trap-engineered FTJ crossbars as a compelling platform for compact, thermally robust, and ultra-low-power hardware security in next-generation electronic systems. | - |
| dc.format.extent | 13 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER | - |
| dc.title | Ultra-low-energy physical unclonable function enabled by trap-engineered ferroelectric tunnel junction crossbar | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.nanoen.2026.111871 | - |
| dc.identifier.scopusid | 2-s2.0-105035538515 | - |
| dc.identifier.wosid | 001719999800001 | - |
| dc.identifier.bibliographicCitation | NANO ENERGY, v.152, pp 1 - 13 | - |
| dc.citation.title | NANO ENERGY | - |
| dc.citation.volume | 152 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 13 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | Bit error rate | - |
| dc.subject.keywordPlus | Entropy | - |
| dc.subject.keywordPlus | Error correction | - |
| dc.subject.keywordPlus | Error statistics | - |
| dc.subject.keywordPlus | Ferroelectric devices | - |
| dc.subject.keywordPlus | Ferroelectricity | - |
| dc.subject.keywordPlus | Hafnium oxides | - |
| dc.subject.keywordPlus | Hardware security | - |
| dc.subject.keywordPlus | Oxygen vacancies | - |
| dc.subject.keywordPlus | Passivation | - |
| dc.subject.keywordPlus | Reconfigurable hardware | - |
| dc.subject.keywordPlus | Semiconductor junctions | - |
| dc.subject.keywordPlus | Shot noise | - |
| dc.subject.keywordPlus | Tunnel junctions | - |
| dc.subject.keywordPlus | Zirconium compounds | - |
| dc.subject.keywordAuthor | Ferroelectric tunnel junctions (FTJ) | - |
| dc.subject.keywordAuthor | Low-frequency noise (LFN) | - |
| dc.subject.keywordAuthor | Hafnium zirconium oxide (HZO) | - |
| dc.subject.keywordAuthor | Physical unclonable function (PUF) | - |
| dc.subject.keywordAuthor | Crossbar array | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S2211285526001758?via%3Dihub | - |
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