Fully-Differential Integrator based On-Chip Current Sensor for SiC MOSFET

Abstract

This paper proposes a current sensor for measuring the drain current of a SiC MOSFET, employing a fully differential integrator to suppress noise from the Rogowski coil. The coil's induced voltage is converted into a current value through the integrator. Two different Rogowski coils which have different number of turns (10 and 30) are designed and simulated with the proposed system. Simulation results verify that the coil with 30 turns produces an amplitude that is 2.81 times larger than that of the 10-turn coil. Consequently, the 30-turn coil demonstrates better performance.