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Perpendicular magnetic tunnel junction (p-MTJ) spin-valves designed with a top Co2Fe6B2 free layer and a nanoscale-thick tungsten bridging and capping layer

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dc.contributor.authorLee, Seung-Eun-
dc.contributor.authorShim, Tae-Hun-
dc.contributor.authorPark, Jea-Gun-
dc.date.accessioned2021-08-02T15:55:50Z-
dc.date.available2021-08-02T15:55:50Z-
dc.date.created2021-05-12-
dc.date.issued2016-11-
dc.identifier.issn1884-4049-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21413-
dc.description.abstractRecently, p-MTJ spin-valves with top Co2Fe6B2 free layers have been widely studied. They potentially experience crystallinity degradation in the face-centered-cubic (fcc) structure of the MgO tunneling barrier as a result of the diffusion of Ta atoms and a significant amount of Fe atoms from the Co2Fe6B2 free and pinned layers. A new design of the p-MTJ spin-valve using a nanoscale-thick W bridging and capping layer demonstrated the absence of significant crystallinity degradation in the fcc structure and showed a limited diffusion of Fe atoms, thus achieving a TMR ratio of similar to 143% at an ex-situ annealing temperature of 400 degrees C.-
dc.language영어-
dc.language.isoen-
dc.publisherNATURE PUBLISHING GROUP-
dc.titlePerpendicular magnetic tunnel junction (p-MTJ) spin-valves designed with a top Co2Fe6B2 free layer and a nanoscale-thick tungsten bridging and capping layer-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Jea-Gun-
dc.identifier.doi10.1038/am.2016.162-
dc.identifier.scopusid2-s2.0-84994607227-
dc.identifier.wosid000387402500004-
dc.identifier.bibliographicCitationNPG ASIA MATERIALS, v.8, no.11, pp.1 - 5-
dc.relation.isPartOfNPG ASIA MATERIALS-
dc.citation.titleNPG ASIA MATERIALS-
dc.citation.volume8-
dc.citation.number11-
dc.citation.startPage1-
dc.citation.endPage5-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusANISOTROPY-
dc.subject.keywordPlusAtoms-
dc.subject.keywordPlusCarbon dioxide-
dc.subject.keywordPlusMagnetoresistance-
dc.subject.keywordPlusNanotechnology-
dc.subject.keywordPlusTunnel junctions-
dc.identifier.urlhttps://www.nature.com/articles/am2016162-
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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