Thickness fluctuation relations in carrier dynamics of CdTe/ZnTe quantum dots

Abstract

We investigated the influence of thickness fluctuations on the carrier dynamics of CdTe/ZnTe quantum dots (QDs). The temperature dependence of both the red-shift in the band-edge transition energy and broadening of the emission line were evaluated using different models. We showed that the quantum confinement effect and thermal escape of the QDs can be extended to significantly higher temperatures. These results were confirmed by using the discrete recombination model to investigate localized and delocalized states. Taking place into the reducing fluctuations of QDs that the thermally activated transition energies and the carrier scattering via phonons are enhanced.