Detailed Information
Cited 4 time in 
Cited 4 time in 
Cited 4 time in
Metadata Downloads
Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT)
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | An, Jun Seop | - |
| dc.contributor.author | Choi, Chul Min | - |
| dc.contributor.author | Shindo, Satoshi | - |
| dc.contributor.author | Sutou, Yuji | - |
| dc.contributor.author | Jeong, Hong Sik | - |
| dc.contributor.author | Song, Yun Heub | - |
| dc.date.accessioned | 2021-08-02T16:28:15Z | - |
| dc.date.available | 2021-08-02T16:28:15Z | - |
| dc.date.issued | 2016-09 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.issn | 1350-911X | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22223 | - |
| dc.description.abstract | The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge₁Cu₂Te₃ is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude. | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical Engineers | - |
| dc.title | Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT) | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1049/el.2016.2211 | - |
| dc.identifier.scopusid | 2-s2.0-84983649244 | - |
| dc.identifier.wosid | 000383378500005 | - |
| dc.identifier.bibliographicCitation | Electronics Letters, v.52, no.18, pp 1514 - 1515 | - |
| dc.citation.title | Electronics Letters | - |
| dc.citation.volume | 52 | - |
| dc.citation.number | 18 | - |
| dc.citation.startPage | 1514 | - |
| dc.citation.endPage | 1515 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | Duration time | - |
| dc.subject.keywordPlus | High voltage | - |
| dc.subject.keywordPlus | In-phase | - |
| dc.subject.keywordPlus | Long term depression | - |
| dc.subject.keywordPlus | Long-term potential | - |
| dc.subject.keywordPlus | Phase Change | - |
| dc.subject.keywordPlus | Pulse amplitude | - |
| dc.subject.keywordPlus | Time interval | - |
| dc.identifier.url | https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2211 | - |
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)