Resistive switching memory based on organic/inorganic hybrid perovskite materials
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Yang | - |
dc.contributor.author | Li, Fushan | - |
dc.contributor.author | Chen, Zhixin | - |
dc.contributor.author | Guo, Tailiang | - |
dc.contributor.author | Wu, Chaoxing | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T16:28:57Z | - |
dc.date.available | 2021-08-02T16:28:57Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 0042-207X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22272 | - |
dc.description.abstract | In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Resistive switching memory based on organic/inorganic hybrid perovskite materials | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1016/j.vacuum.2016.05.010 | - |
dc.identifier.scopusid | 2-s2.0-84966728726 | - |
dc.identifier.wosid | 000378450700012 | - |
dc.identifier.bibliographicCitation | VACUUM, v.130, pp.109 - 112 | - |
dc.relation.isPartOf | VACUUM | - |
dc.citation.title | VACUUM | - |
dc.citation.volume | 130 | - |
dc.citation.startPage | 109 | - |
dc.citation.endPage | 112 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BISTABLE DEVICES | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordAuthor | Perovskite | - |
dc.subject.keywordAuthor | Memory | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0042207X16301403?via%3Dihub | - |
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