Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells
DC Field | Value | Language |
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dc.contributor.author | Kwon, Yongwoo | - |
dc.contributor.author | Park, Byoungnam | - |
dc.contributor.author | Yang, Heesun | - |
dc.contributor.author | Hwang, Jin-Ha | - |
dc.contributor.author | Kang, Dae-Hwan | - |
dc.contributor.author | Jeong, Hongsik | - |
dc.contributor.author | Song, Yunheub | - |
dc.date.accessioned | 2021-08-02T16:29:13Z | - |
dc.date.available | 2021-08-02T16:29:13Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22283 | - |
dc.description.abstract | Data retention statistics of phase-change memory with two representative cell schemes, confined and mushroom cells, were investigated using phase-field method that can correctly model successive nucleation events and their. growth, simultaneously. Several directions of cell structure engineering are suggested. An interesting point is that reducing only one lateral dimension below a characteristic length can improve the data retention. Most importantly, it was found that the cumulative distribution of the retention time is Weibull for the mushroom cells while that is lognormal for,the confined cells. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yunheub | - |
dc.identifier.doi | 10.1016/j.microrel.2016.04.007 | - |
dc.identifier.scopusid | 2-s2.0-84966711829 | - |
dc.identifier.wosid | 000384776200037 | - |
dc.identifier.bibliographicCitation | MICROELECTRONICS RELIABILITY, v.63, pp.284 - 290 | - |
dc.relation.isPartOf | MICROELECTRONICS RELIABILITY | - |
dc.citation.title | MICROELECTRONICS RELIABILITY | - |
dc.citation.volume | 63 | - |
dc.citation.startPage | 284 | - |
dc.citation.endPage | 290 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CRYSTAL NUCLEATION | - |
dc.subject.keywordPlus | CRYSTALLIZATION | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordAuthor | Phase-change memory | - |
dc.subject.keywordAuthor | Data retention | - |
dc.subject.keywordAuthor | Variability | - |
dc.subject.keywordAuthor | Nucleation and growth | - |
dc.subject.keywordAuthor | Phase-field method | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0026271416300828?via%3Dihub | - |
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