Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shindo, S. | - |
dc.contributor.author | Sutou, Y. | - |
dc.contributor.author | Koike, J. | - |
dc.contributor.author | Saito, Y. | - |
dc.contributor.author | Song, Yun Heub | - |
dc.date.accessioned | 2021-08-02T16:51:52Z | - |
dc.date.available | 2021-08-02T16:51:52Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22995 | - |
dc.description.abstract | We have investigated the contact resistivity of GeCu2Te3 (GCT) phase change material to a W electrode using the circular transfer length method (CTLM). The contact resistivity rho(c) of as-deposited amorphous GCT to W was 3.9 x 10(-2) Omega cm(2). The value of rho(c) drastically decreased upon crystallization and crystalline GCT that annealed at 300 degrees C showed a rho(c) of 4.8 x 10(-6) Omega cm(2). The rho(c) contrast between amorphous (as-deposited) and crystalline (annealed at 300 degrees C) states was larger in GCT than in conventional Ge2Sb2Te5 (GST). Consequently, it was suggested from a calculation based on a simple vertical structure memory cell model that a GCT memory cell shows a four times larger resistance contrast than a GST memory cell. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun Heub | - |
dc.identifier.doi | 10.1016/j.mssp.2016.02.006 | - |
dc.identifier.scopusid | 2-s2.0-84958531126 | - |
dc.identifier.wosid | 000375042200001 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.47, pp.1 - 6 | - |
dc.relation.isPartOf | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 47 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GE2SB2TE5 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S1369800116300270?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.