Selective Improvement of NO₂ Gas Sensing Behavior in SnO₂ Nanowires by Ion-Beam Irradiation
- Authors
- Kwon, Yong Jung; Kang, Sung Yong; Wu, Ping; Peng, Yuan; Kim, Sang Sub; Kim, Hyoun Woo
- Issue Date
- Jun-2016
- Publisher
- AMER CHEMICAL SOC
- Keywords
- nanowires; gas sensor; ion-beam irradiation; SnO2; NO2
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.8, no.21, pp.13646 - 13658
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 8
- Number
- 21
- Start Page
- 13646
- End Page
- 13658
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23005
- DOI
- 10.1021/acsami.6b01619
- ISSN
- 1944-8244
- Abstract
- We irradiated SnO₂ nanowires with He ions (45 MeV) with different ion fluences. Structure and morphology of the SnO₂ nanowires did not undergo noticeable changes upon ion-beam irradiation. Chemical so, equilibrium in SnO₂/gas systems was calculated from thermodynamic principles, which were used to study the sensing selectivity of the tested gases, demonstrating the selective sensitivity of the SnO₂ surface to NO₂ gas. Being different from other gases, including H₂, ethanol, acetone, SO₂, and NH₃, the sensor response to NO₂ gas significantly increases as the ion fluence Acetone increases, showing a maximum under an ion fluence of 1 X 10¹⁶ ions/cm². Photoluminescence analysis shows that the relative intensity of the peak at 2.1 eV to the peak at 2.5 eV increases upon ion-beam irradiation, suggesting that structural defects and/or tin interstitials have been generated. X-ray photoelectron spectroscopy indicated that the ionic ratio of Sn²⁺/Sn⁴⁺ increases by the ion-beam irradiation, supporting the formation of surface Sn interstitials. Using thermodynamic calculations, we explained the observed selective sensing behavior. A molecular level model was also established for the adsorption of NO₂ on ion-irradiated SnO₂ (110) surfaces. We propose that the adsorption of NO₂-related species is considerably enhanced by the generation of surface defects that are comprised of Sn interstitials.
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