Graphene Monoxide Bilayer As a High-Performance on/off Switching Media for Nanoelectronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Woo, Jungwook | - |
dc.contributor.author | Yun, Kyung-Han | - |
dc.contributor.author | Chung, Yong-Chae | - |
dc.date.accessioned | 2021-08-02T17:26:23Z | - |
dc.date.available | 2021-08-02T17:26:23Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23839 | - |
dc.description.abstract | The geometries and electronic characteristics of the graphene monoxide (GMO) bilayer are predicted via density functional theory (DFT) calculations. All the possible sequences of the GMO bilayer show the typical-interlayer bonding characteristics of two-dimensional bilayer systems with a weak van der Waals interaction. The band gap energies of the GMO bilayers are predicted to be adequate for electronic device application, indicating slightly smaller energy gaps (0.418-0.448 eV) compared to the energy gap of the monolayer (0.536 eV). Above all, in light of the band gap engineering, the band gap of the GMO bilayer responds to the external electric field sensitively. As a result, a semiconductor-metal transition occurs at a small critical electric field (E-C = 0.22-0.30 V/angstrom). It is therefore confirmed that the GMO bilayer is a strong candidate for nano electronics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Graphene Monoxide Bilayer As a High-Performance on/off Switching Media for Nanoelectronics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Chung, Yong-Chae | - |
dc.identifier.doi | 10.1021/acsami.6b01772 | - |
dc.identifier.scopusid | 2-s2.0-84966376826 | - |
dc.identifier.wosid | 000375245100048 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.16, pp.10477 - 10482 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 10477 | - |
dc.citation.endPage | 10482 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | GENERALIZED GRADIENT APPROXIMATION | - |
dc.subject.keywordPlus | TUNABLE BAND-GAP | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | MODULATIONS | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordAuthor | graphene monoxide | - |
dc.subject.keywordAuthor | giant Stark effect | - |
dc.subject.keywordAuthor | band gap | - |
dc.subject.keywordAuthor | electric field | - |
dc.subject.keywordAuthor | first-principles calculation | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.6b01772 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.