Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Yong Jin | - |
dc.contributor.author | An, Tae Kyu | - |
dc.contributor.author | Yun, Don-Jin | - |
dc.contributor.author | Kim, Lae Ho | - |
dc.contributor.author | Park, Seonuk | - |
dc.contributor.author | Kim, Yebyeol | - |
dc.contributor.author | Nam, Sooji | - |
dc.contributor.author | Lee, Keun Hyung | - |
dc.contributor.author | Kim, Se Hyun | - |
dc.contributor.author | Jang, Jaeyoung | - |
dc.contributor.author | Park, Chan Eon | - |
dc.date.accessioned | 2021-08-02T17:27:34Z | - |
dc.date.available | 2021-08-02T17:27:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23920 | - |
dc.description.abstract | Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jang, Jaeyoung | - |
dc.identifier.doi | 10.1021/acsami.6b00259 | - |
dc.identifier.scopusid | 2-s2.0-84960157982 | - |
dc.identifier.wosid | 000371453600053 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.8, pp.5499 - 5508 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 5499 | - |
dc.citation.endPage | 5508 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SOL-GEL METHOD | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | ANNEALING TEMPERATURE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | PHOTOPOLYMERIZATION | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordAuthor | oxide thin-film transistors | - |
dc.subject.keywordAuthor | complementary inverters | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | low-voltage operation | - |
dc.subject.keywordAuthor | zinc acrylate | - |
dc.subject.keywordAuthor | solution process | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.6b00259 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.